| Absolute Maximum Ratings (TA = 25C unless otherwise noted) |
| Input-to-Output Isolation Voltage | Viso | 1.0 kVac (1) | Vrms | Inputs shorted to outputs |
| Operating Temperature | Topr | -55 to +125 | C | |
| Storage Temperature | Tstg | -65 to +150 | C | |
| Soldering Temperature (vapor phase reflow for 30 sec.) | Tsolder | 215 | C | |
| Soldering Temperature (heated collet for 5 sec.) | Tsolder | 260 | C | |
| Input Diode |
| Forward Current | IF | 40 | mA | (65C below) |
| Reverse Voltage | VR | 2.0 | V | |
| Power Dissipation | Pd | 60 | mW(2) | |
| Output Phototransistor |
| Continuous Collector Current | IC | 50 | mA | |
| Collector-Emitter Voltage | VCEO(3) | 30 | V | |
| Emitter-Collector Voltage | VECO(4) | 5.0 | V | |
| Power Dissipation | Pd | 300 | mW(5) | |
| Electrical Characteristics (TA = 25C unless otherwise noted) |
| Input Diode |
| Forward Voltage | VF | 1.00 | 1.00 | V | IF = 10.0 mA, TA = 25C |
| | 0.70 | 0.70 | V | IF = 10.0 mA, TA = -55C |
| | 1.00 | 1.00 | V | IF = 10.0 mA, TA = 100C |
| Reverse Current | IR | 100 | nA | VR = 2.0 V |
| Output Phototransistor |
| Collector-Emitter Breakdown Voltage | V(BR)CEO(3) | 30 | V | IC = 1.0 mA, IF = 0 |
| Emitter-Collector Breakdown Voltage | V(BR)ECO(4) | 5.0 | V | IC = 100 A, IF = 0 |
| Collector-Emitter Dark Current | IO(OFF) | 100 | nA | VCE = 20 V, IF = 0 |
| | 100 | 100 | nA | VCE = 20 V, IF = 0, TA = 100C |
| Coupled |
| On-State Collector Current | IO(ON) | 0.15 | 0.40 | mA | VCE = 5.0 V, IF = 2.0 mA |
| | 2.5 | 10.0 | mA | VCE = 5.0 V, IF = 10.0 mA |
| | 1.0 | 4.0 | mA | VCE = 5.0 V, IF = 10.0 mA, TA = -55C |
| | 1.0 | 4.0 | mA | VCE = 5.0 V, IF = 10.0 mA, TA = 100C |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.30 | 0.30 | V | IC = 2.5 mA, IF = 20.0 mA (HCPL-240) / IC = 10.0 mA, IF = 20.0 mA
(HCPL-242) |
| Isolation Resistance (Input to Output) | RISO | 1011 | | VISO = 1000 V (1) |
| Isolation Capacitance (Input to Output) | CISO | 5.0 | pF | VISO = 0 V, f = 1.0 MHz(1) |
| Output Rise Time | tr | 15.0 | 20.0 | ns | VCE = 10.0 V, IF = 10.0 mA, RL = 100 |
| Output Fall Time | tf | 15.0 | 20.0 | ns | VCE = 10.0 V, IF = 10.0 mA, RL = 100 |